2025年1月11日 星期六

Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD

作者: Jia TT; Zhou SM; Teng H; Lin H; Wang J; Liu JQ (刘建奇); Qiu YX (邱永鑫); Huang J (黄俊); Huang K (黄凯); Bao F; Xu K (徐科)
刊物名称: Applied Surface Science
年: 2010-12-01