Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD
作者: | Jia TT; Zhou SM; Teng H; Lin H; Wang J; Liu JQ (刘建奇); Qiu YX (邱永鑫); Huang J (黄俊); Huang K (黄凯); Bao F; Xu K (徐科) |
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刊物名称: | Applied Surface Science |
年: | 2010-12-01 |